p n Junction Electrostatics under Bias, Depletion Capacitance

EBook Description: Contents: 1. electrostatics of pn junction under bias 2. depletion capacitance.

The objective of this section will be to show how to use the first- and second-order filters to achieve higher order filters. We shall also introduce a general, second-order stage called the biquad.

Discrete Filter Notes (PDF 30p)

The other approach uses a ladder configuration and is presented in this section. Both approaches are used to design successful higher-order active filters. The cascade approach is easier to design and tune but does not have the insensitivity to component variation found in the ladder approach.

Fundamental IC Noise paper (PDF)

Most people find the subject of noise mysterious, and there is, under- standably, much confusion about it. Although the fundamental physical concepts behind noise are simple. much of this simplicity is often obscured by the mathematics invoked to compute expressions for the noise.

MOS Electrostatics at 0 V

Contents:
1. Introduction to MOS structure
2. Electrostatics of MOS at zero bias
3. Electrostatics of MOS under bias

MOS Electrostatics under Bias, MOS Capacitance

Contents:
1. Overview of MOS electrostatics under bias
2. Depletion regime
3. Flatband
4. Accumulation regime
5. Threshold
6. Inversion regime

Electrostatics of Metal�Oxide�Semiconductor Structure

Contents:
1. Overview of MOS electrostatics under bias
2. Depletion regime
3. Flatband
4. Accumulation regime
5. Threshold
6. Inversion regime

MOSFET I V Characteristics (Qualitative, Linear)

Contents:
1. MOSFET: cross-section, layout, symbols
2. Qualitative operation
3. I-V characteristics.

MOSFET I V Characteristics (Saturation, Back Bias)

Contents:
1. The saturation regime
2. Backgate characteristics

MOSFET Equivalent Circuit Models

Contents:
1. Low-frequency small-signal equivalent circuit model
2. High-frequency small-signal equivalent circuit model

Introduction to Power MOSFETs and Their Applications (PDF)

The high voltage power MOSFETs that are available today
are N-channel, enhancement-mode, double diffused, Metal-
Oxide-Silicon, Field Effect Transistors. They perform the
same function as NPN, bipolar junction transistors except
the former are voltage controlled in contrast to the current
controlled bi-polar device.

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