Discrete Filter Notes (PDF 36p)
The objective of this section will be to show how to use the first- and second-order filters to achieve higher order filters. We shall also introduce a general, second-order stage called the biquad.
Discrete Filter Notes (PDF 30p)
The other approach uses a ladder configuration and is presented in this section. Both approaches are used to design successful higher-order active filters. The cascade approach is easier to design and tune but does not have the insensitivity to component variation found in the ladder approach.
Fundamental IC Noise paper (PDF)
Most people find the subject of noise mysterious, and there is, under- standably, much confusion about it. Although the fundamental physical concepts behind noise are simple. much of this simplicity is often obscured by the mathematics invoked to compute expressions for the noise.
MOSFET I V Characteristics (Qualitative, Linear)
Contents: 1. MOSFET: cross-section, layout, symbols 2. Qualitative operation 3. I-V characteristics.
MOSFET I V Characteristics (Saturation, Back Bias)
Contents: 1. The saturation regime 2. Backgate characteristics
MOSFET Equivalent Circuit Models
Contents: 1. Low-frequency small-signal equivalent circuit model 2. High-frequency small-signal equivalent circuit model
Introduction to Power MOSFETs and Their Applications (PDF)
The high voltage power MOSFETs that are available today are N-channel, enhancement-mode, double diffused, Metal- Oxide-Silicon, Field Effect Transistors. They perform the same function as NPN, bipolar junction transistors except the former are voltage controlled in contrast to the current controlled bi-polar device.
MOSFET Basics (PDF 37p)
The Bipolar Power Transistor (BPT), as a switching device for power applications, had a few disadvantages. This led to the development of the power MOSFET (Metal Oxide Semiconductor Field Effect Transistor). The power MOSFET is used in many applications such as SMPS (Switched Mode Power Supplies), computer peripherals, automotive, and motor control. Continuous research and improvement have provided it with ideal characteristics for replacing the BJT (Bipolar Junction Transistor).
Power MOSFET Basics (PDF)
Discrete power MOSFETs employ semiconductor processing techniques that are similar to those of today's VLSI circuits, although the device geometry, voltage and current levels are significantly different from the design used in VLSI devices.
Paralleling Of Power MOSFETs For Higher Power Output (PDF 30p)
Dynamic current and transition energy unbalance resulting from parameter mismatch between parallel MOSFET branches are mapped over wide operating ranges. Unbalance generator magnitudes are given for HEXFET Power MOSFET data sheet ant typical production batch extremes.
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