MOSFET I V Characteristics (Qualitative, Linear)

EBook Description: Contents: 1. MOSFET: cross-section, layout, symbols 2. Qualitative operation 3. I-V characteristics.

The objective of this section will be to show how to use the first- and second-order filters to achieve higher order filters. We shall also introduce a general, second-order stage called the biquad.

Discrete Filter Notes (PDF 30p)

The other approach uses a ladder configuration and is presented in this section. Both approaches are used to design successful higher-order active filters. The cascade approach is easier to design and tune but does not have the insensitivity to component variation found in the ladder approach.

Fundamental IC Noise paper (PDF)

Most people find the subject of noise mysterious, and there is, under- standably, much confusion about it. Although the fundamental physical concepts behind noise are simple. much of this simplicity is often obscured by the mathematics invoked to compute expressions for the noise.

MOSFET I V Characteristics (Saturation, Back Bias)

Contents:
1. The saturation regime
2. Backgate characteristics

MOSFET Equivalent Circuit Models

Contents:
1. Low-frequency small-signal equivalent circuit model
2. High-frequency small-signal equivalent circuit model

Introduction to Power MOSFETs and Their Applications (PDF)

The high voltage power MOSFETs that are available today
are N-channel, enhancement-mode, double diffused, Metal-
Oxide-Silicon, Field Effect Transistors. They perform the
same function as NPN, bipolar junction transistors except
the former are voltage controlled in contrast to the current
controlled bi-polar device.

MOSFET Basics (PDF 37p)

The Bipolar Power Transistor (BPT), as a switching device for power applications, had a few disadvantages. This led to the development of the power MOSFET (Metal Oxide Semiconductor Field
Effect Transistor). The power MOSFET is used in many applications such as SMPS (Switched
Mode Power Supplies), computer peripherals, automotive, and motor control. Continuous research
and improvement have provided it with ideal characteristics for replacing the BJT (Bipolar Junction
Transistor).

Power MOSFET Basics (PDF)

Discrete power MOSFETs
employ semiconductor
processing techniques that are
similar to those of today's VLSI
circuits, although the device
geometry, voltage and current
levels are significantly different
from the design used in VLSI
devices.

Paralleling Of Power MOSFETs For Higher Power Output (PDF 30p)

Dynamic current and transition energy unbalance resulting from parameter mismatch between parallel
MOSFET branches are mapped over wide operating ranges. Unbalance generator magnitudes are given for HEXFET
Power MOSFET data sheet ant typical production batch extremes.

Digital Modulation in Communications Systems An Introduction (PDF 48p)

Most communications systems fall into one of three categories: bandwidth efficient, power efficient, or cost efficient. Bandwidth efficiency describes
the ability of a modulation scheme to accommodate data within a limited bandwidth.

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