CMOS, the Ideal Logic Family (PDF)

EBook Description: The properties of CMOS (complementary MOS) begin to approach these ideal characteristics. First, CMOS dissipates low power. Typically, the static power dissipation is 10 nW per gate which is due to the flow of leakage currents. The active power depends on power supply voltage, frequency, output load and input rise time, but typically, gate dissipation at 1 MHz with a 50 pF load is less than 10 mW.

CMOS devices have a high input impedance, high gain, and high bandwidth. These
characteristics are similar to ideal amplifier characteristics and, hence, a CMOS buffer or
inverter can be used in an oscillator circuit in conjunction with other passive components.

CMOS Circuits (PPT 29p)

Some CMOS Circuits.

CMOS Basic (PPT)

Basic of CMOS.

Introduction to VLSI CMOS Circuits Design (PDF 87p)

Introduction to VLSI CMOS Circuits Design.

Design of CMOS Digital Integrated Circuits Lecture Notes

Notes on Design of CMOS Digital Integrated Circuits.

Introduction to CMOS (PDF Slides 35p)

CMOS - Complementary MOS
P-WELL CMOS
N-WELL CMOS
Dual Well, Quad Well.

CMOS Electronic Circuit Design

Some notes on CMOS Electronic Circuit Design.

Lecture Notes on CMOS Design and Processes

RIT is supporting two different CMOS process technologies. The older p-well CMOS and SMFL-CMOS has been phased out. The SUB-CMOS process is used for standard 3.3 Volt Digital and Analog integrated circuits. This is the technology of choice for teaching circuit design and fabricating CMOS circuits at RIT. The ADV-CMOS process is intended to introduce our students to process technology that is close to industry state-of-the-art.

CMOS INVERTER (PDF slides 19p)

CMOS Propertie

Full rail-to-rail swing
Symmetrical VTC
Propagation delay function of load
capacitance and resistance of transistors
No static power dissipation
Direct path current during switchin

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